ValorQ4, 24Q1, 25Q2, 25Q3, 25Q4, 25TTMGastos comerciales, generales y administrativos4.93 M5.33 M5.15 M5.17 M5.02 M20.66 MInvestigación y desarrollo3.43 M3.36 M3.58 M3.58 M3.57 M14.09 MBeneficio operativo-1.56 M-1.93 M-1.96 M-1.54 M-1.07 M-6.51 MTotal de ingresos no operativos3.97 M796 K1.26 M1.6 M2.39 M6.05 MGastos por intereses, netos de intereses capitalizados——————Ingresos no operativos, una vez deducidos los gastos por intereses0408 K423 K432 K383 K1.65 MIngresos/gastos extraordinarios3.97 M388 K842 K1.16 M2.01 M4.41 MBeneficio antes de impuestos1.09 M-1.14 M-696 K51 K1.32 M-457 KParticipación en los beneficios——————Impuestos-126 K30 K-26 K-3 000128 K129 KParticipación minoritaria——————Otros ingresos/gastos después de impuestos——————Beneficio neto antes de actividades interrumpidas1.21 M-1.17 M-670 K54 K1.2 M-586 KOperaciones suspendidas——————Beneficio neto1.21 M-1.17 M-670 K54 K1.2 M-586 KAjuste por dilución——————Dividendos de las acciones preferentes——————Beneficio neto diluido atribuible a los accionistas1.21 M-1.17 M-670 K54 K1.2 M-586 KBeneficio básico por acción0.07-0.05-0.0300.05-0.03Beneficio por acción diluido0.07-0.05-0.0300.05-0.03Número medio de acciones ordinarias21.64 M22.19 M22.5 M22.67 M22.57 M89.93 MAcciones diluidas22.16 M22.19 M22.5 M23.15 M22.57 M90.41 MEBITDA-1.46 M-1.53 M-1.56 M-1.15 M730 K-3.51 MEBIT-1.56 M-1.93 M-1.96 M-1.54 M-1.07 M-6.51 MCosto de los ingresos6.45 M6.38 M6.43 M6.85 M7.29 M26.96 MOtros costes de producción——————Amortización y depreciación (flujo de caja)100 K400 K400 K400 K1.8 M3 M
Everspin Technologies Inc
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performing backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical.