Valor202020212022202320242025TTMGastos comerciales, generales y administrativos14.76 M15.41 M16.61 M19.58 M19.53 M20.66 M20.66 MInvestigación y desarrollo10.9 M12.63 M11.11 M11.78 M13.69 M14.09 M14.09 MBeneficio operativo-7.56 M5.04 M6.23 M5.88 M-7.09 M-6.51 M-6.51 MTotal de ingresos no operativos-24 K-141 K190 K3.21 M7.83 M6.05 M6.05 MGastos por intereses, netos de intereses capitalizados665 K547 K274 K63 K———Ingresos no operativos, una vez deducidos los gastos por intereses-665 K-547 K-274 K-63 K01.65 M1.65 MIngresos/gastos extraordinarios-24 K-141 K190 K3.21 M7.83 M4.41 M4.41 MBeneficio antes de impuestos-8.25 M4.35 M6.14 M9.04 M741 K-457 K-457 KParticipación en los beneficios———————Impuestos260 K4 00014 K-16 K-40 K129 K129 KParticipación minoritaria———————Otros ingresos/gastos después de impuestos———————Beneficio neto antes de actividades interrumpidas-8.51 M4.34 M6.13 M9.05 M781 K-586 K-586 KOperaciones suspendidas———————Beneficio neto-8.51 M4.34 M6.13 M9.05 M781 K-586 K-586 KAjuste por dilución———————Dividendos de las acciones preferentes———————Beneficio neto diluido atribuible a los accionistas-8.51 M4.34 M6.11 M9.03 M781 K-586 K-586 KBeneficio básico por acción—0.220.30.440.04-0.03-0.03Beneficio por acción diluido—0.220.290.420.04-0.03-0.03Número medio de acciones ordinarias—19.4 M20.13 M20.75 M21.64 M22.57 M89.93 MAcciones diluidas—19.97 M20.78 M21.37 M22.16 M22.57 M90.41 MEBITDA-7.24 M5.35 M6.33 M5.91 M-6.99 M-4.71 M-3.51 MEBIT-7.56 M5.04 M6.23 M5.88 M-7.09 M-6.51 M-6.51 MCosto de los ingresos23.94 M22.07 M26.04 M26.52 M24.28 M26.96 M26.96 MOtros costes de producción———————Amortización y depreciación (flujo de caja)323 K319 K105 K26 K100 K1.8 M3 M
Everspin Technologies Inc
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performing backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical.